Analyses of 3D atomic arrangements of impurity atoms doped in silicon by spectro-photoelectron holography technique

Spectro-photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic structures of arsenic (As) atoms doped into a silicon (Si) crystal. As 3d core level photoelectron spectroscopy demonstrated the presence of three types of As atoms, denoted as BEH, BEM, and BEL. The As atoms of BEH corresponded to electrically active As occupying substitutional sites, while those of BEM corresponded to electrically inactive As embedded in the As
_n
V (n = 2-4) type clusters, and those of BEL were assigned to electrically inactive As in locally disordered structures.