High Performance Thermistor Based on Si1−xGex/Si Multi Quantum Wells

This letter represents a prototype of an intrinsic thermistor based on silicon-germanium/silicon (Si
_1−x
Ge
_x
/Si) multi quantum wells with varying Ge concentration in SiGe wells. Experimental results of the thermistor prototype are provided in terms of temperature coefficient of resistance (TCR) and noise constant (K
_1/f
). The prototype with 50% Ge in SiGe wells exhibited an outstanding TCR of −5.5 %/K accompanied by a K
_1/f
of
$5.8\times 10^{-13}$
for
$25~\mu \text{m} \times 25~\mu \text{m}$
and
$3.4\times 10^{-15}$
for
$200~\mu \text{m} \times 200~\mu \text{m}$
pixel size, showing the concurrent achievement of a very high TCR and a low 1/f noise performance.