Characterizations of a Proposed 3300-V Press-Pack IGBT Module Using Nanosilver Paste for High-Voltage Applications

Nanosilver paste was used in this study as a die-attachment material for 3300-V power chips to eliminate the pressure contact of a press-pack power module. The proposed insulated-gate bipolar transistor (IGBT) module was named as a sinter-pack IGBT module. We studied the effect of the assisted hydrostatic pressure, i.e., 0, 1, 3, 5, and 10 MPa, on the mechanical, thermal, and electrical performance of the as-sintered silver joints. As the pressure increased, the die-shear strength increased, and the thermal impedance decreased, as expected. The electrical properties of the assembly using the sintered silver were comparable with those of the chip with the same power rating, which proved the feasibility of the as-sintered IGBT specimens. The thermal resistance of the sinter-pack IGBT module decreased by 15.8% compared with that of the commercial press-pack one with the same power rating. The static electrical properties of the sinter-pack IGBT module were consistent with those of the commercial press-pack one, which further proved the feasibility of the sinter-pack IGBT module.