Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment

Amorphous InGaZnO (a-IGZO) is used as TFTs channel layer, it is deposited with atmospheric-pressure PECVD (AP-PECVD). By AP-PECVD, a-IGZO can be deposited without vacuum system, and keep the cost down and applied to large area manufacturing. To further improve the electrical characteristics of atmospheric-pressure deposited a-IGZO (AP-IGZO) TFTs, post processing by re-oxidation (NBRO) is applied to treat on top of AP-IGZO thin film. The investigation shows when the NBRO post-deposited annealing (PDA) power is 400W for 300 seconds, better electrical characteristic is achieved as mobility of 10.78 cm
²
/Vs, small subthreshold swing of 100 mV/dec, lower off-state leakage current 3.7×10
⁻¹²
A, and better I
on
/I
off
ratio of 2.76×10
⁶
.