10-Gb/s Indoor THz Communications Using Industrial Si Photonics Technology

In this letter, we report the design, fabrication, and measurement of a silicon photonics-based transmitter (Tx) offering both mass production capability and high integration level potentiality. The Tx circuit consists of an integrated photodiode generating a 200-300-GHz signal for photonic upconversion from baseband to millimeter-wave. This Tx achieved output power in the range of -20 to -30 dBm over the 150-300-GHz frequency band is used to demonstrate an indoor 300-GHz wireless link. The receiver is using a commercial Schottky diode to enable direct detection. Amplitude modulation is successfully tested, and real-time bit error rates are shown for up to 10-Gb/s data rates.