Scaling of the transistors produced by a radiation-resistant CMOS technology

For improving of CMOS performance as the part of the radiation-resistant process engineering, scaling of transistors for improving of performance with keeping of level breakdown voltages is required. Effects of upgrade of a process flow of transistors with the improving a breakdown voltage and a current of the open transistor obtained by means of process and device simulation Synopsys TCAD and the experimental results are presented. Working currents of ON transistors were balanced by increasing the current of the p-channel one and maintaining the current for n-transistor in ON mode of operation. To ensure the required characteristics, the transistors use a retrograde well.