Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current

Physical models for threshold voltage and drain saturation current of AlGaN/GaN MIS-FinFETs have been established and verified by TCAD simulation to provide guidelines for the GaN MIS-FinFETs-based designs. The depletion effect on the two dimensional electron gases (2DEG) channel by sidewall fin gate is modeled based on the numerical solutions of Poisson equation with proper boundary conditions. The conduction band at the 2DEG zone lifted above the Fermi level by the gate bias is modeled for getting the threshold voltage. The device saturation current, comprising 2DEG channel current and sidewall channel current, as a function of fin width has also been modeled. The influences of device design parameters on the threshold voltage and saturation current are analyzed by the proposed models with verification.