Universal impurity ionization parameters in MIS C-V freeze-out characteristics and direct extraction of surface doping concentration

The carrier freeze-out is responsible for a kink-effect near the flat-band voltage in MIS capacitance-voltage (C-V) characteristics. By studying this phenomenon in depth, it has been demonstrated that the flat kink situation is governed by only two universal and constant parameters. Taking advantage of this particularity, a new method has been proposed and experimentally validated, aimed at extracting directly surface doping concentrations and impurity ionization energies.