A new substrate current model for submicron MOSFETs

In this paper, we present a new and improved substrate current model for submicron MOSFETs, which uses a simple analytical approximation of the ionization length near the drain, which in turn is based on a calculation of the electric field distribution near the drain region. The simulation results from our models for the ionization length as well as the substrate current are compared with the experimental results reported in literature, and a good match between the two is obtained.