Manufacturable GaAs VFET for power switching applications

We have developed a manufacturable process to fabricate high performance GaAs vertical field effect transistors (VFET's). Our process uses ion implantation to form the gate as opposed to previous VFET processes, which used epitaxial regrowth or angled evaporation. In this process, trenches 1.2 μm wide by 0.6 μm deep with a period of 2.4 μm are formed by reactive ion etch (RIE) then the gate region is formed at the bottom of the trench by Ar/C ion co-implantation. Current handling capability of these devices exceeds 200 A/cm
²
with a specific on-resistance of 0.25 m/spl Omega/-cm
²
and calculated delay times of 13.9 ps.