Monolithic integration of multiple III-V semiconductors on Si

We review our work on the direct epitaxy of III-V compounds on Si using template-assisted selective epitaxy (TASE) and demonstrate its use for the integration of electronic and optical devices. The III-V material is grown within the confined space given by an oxide template structure and lead to a III-V on insulator structure which can be further processed into devices. Monolithic integration of a broad range of III-V compounds enabled the fabrication of III-V FETs, TFETs, ballistic devices as well as optically pumped microdisk lasers on Si.