32Kb Innovative fuse (I-Fuse) array in 22nm FD-SOI with 0.9V/1.4mA program voltage/current and 0.744um2 cell

I-fuse is a revolutionary OTP programmed below an on-set of thermal runaway and above electromigration (EM) threshold. On 22nm FD-SOI, the 1R1T I-fuse has a 0.744um
²
cell and 0.0312mm
²
32Kb array with program voltage ranging from 0.9 V to 1.4 V. The whole array does not require high voltage circuits or charge pumps. The cell current distributions for data 0 and 1 are very tight and have large separation in between that can be sensed easily. The first cut design has been qualified at 150
^o
C for 1,000 hours with very small cell current variations.