Physical device simulation of partial dopant-free asymmetric silicon heterostructure solar cell (P-DASH) based on hole-selective Molybdenum oxide (MoOx) with Crystalline Silicon (cSi)

Silicon heterostructure solar cell based on p-type amorphous silicon (aSi:H) poses fundamental performance limitations due to the narrower band gap of aSi:H and the presence of band gap defects states. Such p-type a-Si:H layer can be replaced by novel carrier-selective Transition Metal Oxide (TMO) films such as Molybdenum oxide (MoO
_x
)that offers higher work function and reduced parasitic absorption and thus enhanced photovoltaic performance. In this work, Silvaco TCAD simulation of Partial Dopant-Free Asymmetric Silicon Heterostructure Solar Cell (P-DASH) based on MoO
_x
hole-selective contact has been performed by analyzing different design parameters. It has been observed that higher work function for MoO
_x
results in the formation of reduced Schottky barrier for holes and blocking contact for electrons at cSi/MoO
_x
interface. Coupled with an optimized MoO
_x
thickness and BSF doping concentration, an open-circuit voltage of 724 mV, short-circuit current density of 38.7 mA/cm
²
, fill factor of 78%, and Power conversion efficiency (η) of 22.07% for 4.6 Ω.cm n-type wafer has been numerically demonstrated.