45 Gb/s Direct Modulation of Two-Section InP-on-Si DFB Laser Diodes

Two-section heterogeneously integrated InP-on-Si DFB laser diodes are demonstrated. In the modulation response, the relaxation oscillation frequency of 10 GHz is followed by a second resonance to achieve nearly 25-GHz 3-dB modulation bandwidth and 45-Gb/s nonreturn-to-zero (NRZ)-ON-OFF keying transmission.