Proper Electrostatic Modulation of Electric Field in a Reliable Nano-SOI With a Developed Channel

This brief is describing a useful idea to reform the distribution of the electric field for nanosilicon-on-insulator metal-oxide-semiconductors-field-effect transistors. The approach we benefit from it is to develop a part of the channel region into the drain region. This technique modulates the channel charge with the creation of an extra peak electric field in the developed channel/drain region interface. As a result, critical electric field of the new proposed structure at the end of the channel is successfully mitigated. DC and ac investigations revealed that the novel device has more reliability than a common device widely utilized in today's industry. The evaluation of both the common and proposed structures is handled by ATLAS simulator from SILVACO family. The important parameters in the cases of the short-channel effects, hot-carrier effects, switching speed, power gain, and parasitic capacitances are comprehensively studied to attain the best decision about the excellent electrical performance of the proposed device.