Schottky Barrier Rectifier Based on (100) $\beta$ -Ga2O3 and its DC and AC Characteristics

A Schottky barrier rectifier was fabricated with a (100)-oriented
$\beta $
-Ga
₂
O
₃
substrate grown by the edge-defined film-fed method. The Sn-doped
$\beta $
-Ga
₂
O
₃
substrate had an effective donor concentration of approximately
$2\times 10^{17}$
cm
⁻³
. High performance parameters were obtained, such as a high forward current (421 A/cm
²
at 2 V), low ON-resistance (2.9
$\text{m}\Omega \cdot $
cm
²
), and short reverse recovery time (20 ns). Furthermore, the dynamic behavior of the device is characterized through test on the half-wave rectification of ac voltages at different frequency. The diode worked well at 100 kHz. At the end of the letter, we discuss how Ga
₂
O
₃
Schottky rectifier can operate at high frequency.