Accelerating electromigration aging for fast failure detection for nanometer ICs

For practical testing and detection of electromigration (EM) induced failures in dual damascene copper interconnects in today's and future sub-10nm ICs, one critical issue is how to create stressing conditions so that the chip will fail exclusively under EM in a very short period of time so that EM signoff and validation can be carried out efficiently. In this work, we propose novel EM wearout-acceleration techniques for practical VLSI chips. We will first review the recently proposed three-phase physics-based EM models and discuss the important factors contributing to the EM aging process. Then we propose a new formula for fast estimation of the void's saturation volume for general multi-segment interconnect wires, which is important for EM mortality check. We then investigate two strategies to accelerate the EM failure process: reservoir-enhanced acceleration and temperature-based acceleration. First we show that multi-segment interconnects with reservoir structures and their stressing currents can be exploited to significantly speedup the EM wearout process. Such configurable reservoir-based wires are very flexible and can achieve various EM accelerations at the costs of some routing resources. Additionally, we show that further acceleration can be achieved by increasing temperature. On average, 10% increase in temperature yields about 10X wearout acceleration. However, purely temperature based acceleration is not possible since practical VLSI chips have temperature limitations which must be strictly enforced to ensure the chip only fails under EM, and not due to other reliability effects. In this study, we show that it is possible to achieve significantly high acceleration while staying within the feasible operating zones by combining the two acceleration techniques. Experimental results show that by combining temperature and reservoir accelerations, we can reduce the EM lifetime of a chip from 10 years down to a few hours (about 10
⁵
acceleration) under the 150°C temperature limit, which is sufficient for practical EM testing of typical nanometer CMOS ICs.