A Comparative Study of GaP/SiGe Hetero Junction Double Gate Tunnel Field Effect Transistor

This manuscript presents a detailed study of Hetero Junction Dual Gate Tunnel Field Effect Transistor (HJDG-TFET) for improving the drain current and degrading the ambipolar behavior. The proposed device employs heteromaterial for device analysis. Drain current of the device increases because of narrowing of tunneling barrier width at the sourcechannel junction with the application of low band gap material at the source/channel junction. Hence, the proposed device shows superior performance over conventional DG-TFET in terms of sub threshold slope, drain current, resistant to parasitic capacitance and high frequency parameters. Further, the optimization of channel length and drain voltage is also performed to ensure the reliability of the device. Hence, the overall performance of the HJ-DG-TFET is examined for better efficiency of the device.