A low loss high isolation double-pole double-throw traveling-wave switch using 0.5-μm GaAs process

A low loss high isolation double-pole double-throw (DPDT) traveling-wave switch using 0.5-μm GaAs process is presented in this paper. A ring-type architecture is utilized to reduce insertion loss. A traveling-wave topology is used to enhance the input bandwidth. The proposed DPDT switch demonstrates a 3-dB bandwidth of DC-to-20 GHz, an insertion loss of 3 dB, and an isolation of 30 dB. The chip size is 2 × 1 mm
²
. The proposed broadband circuit is potential for the multi-bands high speed communication system.