Pulsed microwave sensor on heavily doped semiconductor substrate

Design of unsophisticated cost-effective planar asymmetric microwave diode is proposed. Simplified technological process and use of simplex semiconductor material result in reduction of both time and cost of fabrication of the microwave diode. Two types of the microwave diodes were produced during the same technological run: one demonstrating ohmic features, and the other having Schottky junction-like characteristics. The Schottky-like diodes exhibited higher sensitivity and higher operational speed, while the ohmic ones had wider dynamic range suitable for microwave power measurements.