A Read–Write Circuit for STT-MRAM With Stochastic Switchings

Spin-transfer torque magnetic random memory (STT-MRAM) is a promising candidate for universal memory due to its non-volatility, fast access speed, high density, and low power consumption. In this paper, we propose a read-and-write circuit for STT-MRAMs, which decreases energy consumption and improves the endurance of STT-MRAM cells. The proposed circuit is capable of terminating write operations when the state of the cell has been switched to the desired one. In the circuit, the read and write operations share a single current driver. The proposed circuit including all the digital logic parts has been implemented using a CMOS process and validated using SPICE-level simulations.