A New Holistic Model of 2-D Semiconductor FETs

An analytical compact model for 2-D crystal FETs is proposed. It provides an explicit expression for the drain current as a function of the gate and drain voltages considering Fermi-Dirac statistics and drift-diffusion transport. The model is applicable to n-type or p-type symmetric and asymmetric double gate devices as well as single gate transistors. It is validated against experimental results and can be used to explore in a simple but accurate fashion the physics and the performance limits of 2-D crystal FETs.