${L}_{{g}} = {30}$ nm InAs Channel MOSFETs Exhibiting ${f}_{\textit {max}} ={410}$ GHz and ${f}_{{t}} = {357}$ GHz

We report L
_g
= 30 nm InAs-channel MOSFETs exhibiting 420 GHz fmax, record for a III-V MOSFET, and 357 GHz ft. The device incorporates a 5-nm strained InAs channel grown on an InP substrate. To reduce the parasitic gate-source and gate-drain capacitances, regrown lateral access regions increase the separations between the gate and the N+ source and drain; modulation doping within these access regions provides a low associated series resistance, enabling high g
_m
. The 30 nm L
_g
device shows an 1.5 mS/μm DC peak extrinsic gm at V
_DS
= 0.5 V and V
_GS
= 0.3 V, 91% of the value (1.65 mS/μm) extracted from 10 MHz RF measurements, indicating a low DC-RF dispersion.