A modified exponential pulse-decay modulation technique based on CMOS analog multiplier

A new EPDM multiplier circuit based on the dynamic charge technique has been introduced in this paper. We proposed an alternative EPDM multiplier scheme with double MOS-differential configuration resistor. This active resistor has matched devices biased in the triode region, and enables the multiplier to enhance the output linearity. Since the proposed technique removes the influences of bulk-source and drain-source voltages on circuit resistance with taken into account the effects of channel length modulation. It makes the developed new multiplier suitable enough for the architectures implementation of several analog VLSI neural networks.