Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III–V and Ge Materials

Monolithic 3-D integration has emerged as a promising technological solution for traditional transistor scaling limitations and interconnection bottleneck. The challenge we must overcome is a processing temperature limit for top side devices in order to ensure proper performance of bottom side devices. To solve this problem, we developed a low temperature III–V and Ge layer stacking process using wafer bonding and epitaxial lift-off, since these materials can be processed at a low temperature and provide extended opportunity/functionality (sensor, display, analog, RF, etc.) via heterogeneous integration. In this paper, we discuss technology for integrating III–V and Ge materials and its applicability to CMOS, thin film photodiodes, mid-infrared photonics platforms, and MicroLED display integration for creating the ultimate 3-D chip of the future.