A comprehensive study of the short-circuit characteristics of SiC MOSFETs

The short-circuit capability of power devices is one of the key issues that related to the reliability and safety of Silicon Carbide (SiC) power devices. Firstly, two types of short-circuit faults are introduced, and mechanism of short-circuit current is analyzed in detail. Then, the influence of different circuit parameters on characteristics of SiC MOSFET under short-circuit condition is analyzed and compared. The key factors influencing the short-circuit characteristics are further revealed, providing a guidance for designing short-circuit protection circuit of SiC MOSFET to some extent.