Development, characterization and validation of compact models for RF analog and mixed signal PDKS enabling first pass silicon

This paper emphasizes on the criticality of characterization and validation of compact models in RF Analog & Mixed Signal PDK development to ensure first pass silicon. The importance of predictive modeling comprising TCAD analysis, process and device simulations is emphasized in the context of emerging high frequency, technological advancements. An exhaustive study of the intricacies involved in the model development process, comprising model characterization, model qualification and model release flow to aid successful silicon implementation for RF applications has been presented in this paper. Compact models for active devices like NPNs and MOSFETs that are part of RF AMS PDK library are dealt in detail while touching passive device models at a high level. The importance of quality RF device models in the design environment has been discussed. The role of quality models in the RF design space to aid the designer to realize first pass silicon, contributing to the long term success of design houses, has been presented towards the end of the paper.