Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

In this paper, zinc nitride (Zn
₃
N
₂
)-based flexible thin-film transistors (TFTs) are presented. The zinc nitride thin film is deposited by magnetron radio frequency sputtering at room temperature, while spin-on glass and aluminum were used as gate insulator and source/drain electrode, respectively. Polyethylene terephthalate is used as flexible substrate. The flexible Zn
₃
N
₂
TFTs were characterized while bent to 5-mm tensile radius. The flexible TFTs exhibit an electron mobility of 3.8 cm
²
/V·s and an ON/OFF current ratio close to 10
⁵
after several cycles of bending and being exposed to air ambient for 30 days.