Electrical and optical properties of Mg ion implanted GaN p-n junctions

In this paper we report the electrical and optical properties of GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature with doses ranged from 10/sup 13/ to 2/spl times/10/sup 16/ cm/sup -2/. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600/spl deg/C to 1200/spl deg/C in flowing N/sub 2/ to form p-type layers. Scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures. Samples were characterized by photoluminescence. Electroluminescence from Mg implanted p-n junction structures has been observed for the first time.