Performance estimation of junctionless FinFET with graded channel design

This paper investigates the Junctionless (JL) FinFET with laterally graded channel and differentially graded channel design using TCAD simulation. It is demonstrated that differentially graded-JL FinFET (DG-JL FinFET) provides better subthreshold characteristics as compared to laterally graded-JL FinFET (LG-JL FinFET) and conventional uniformly doped-JL FinFET (UD-JL FinFET). However, the drive current is higher in LD-JL FinFET.