One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric

Indium-gallium-zinc-oxide thin-film transistors (TFTs) with solution-processed, high-capacitance Al
_x
O
_y
gate dielectrics have been fabricated at room temperature. The morphology and electrical properties of the anodized, ultra-thin AlxOy film have been studied. Several anodization voltages were used to create the gate dielectrics and the results showed that the TFTs gated with aluminum oxide anodized at 2.3 V (~3 nm) exhibited the best performance. The TFTs operate at an ultra-low voltage of 1 V with a high current on/off ratio >10
⁵
and a subthreshold swing (SS) as low as 68 mV/dec, which is very close to the theoretical limit of SS at 300 K. As a result, the presented devices possess a great potential for low-power electronics.