Fabrication of 2 x 2 crosspoint switches using a sputtered SiO2 intermixing technique

We report the fabrication of a 2×2 crosspoint switch, which monolithically integrates passive waveguides and electroabsorption modulators on one chip, using the sputtered SiO
₂
technique for quantum-well intermixing. The static performance of the modulators has been tested, and a modulation depth of 25 dB has been obtained at a wavelength of 1.55 μm for an applied bias of 2 V.