MRAM: Enabling a sustainable device for pervasive system architectures and applications

MRAM, specifically, perpendicular spin-transfer-torque (STT) MRAM, has reached a stage to serve early adopters. With its unique attributes and tunability, MRAM can create desirable system differentiations which were not possible due to inherent limitations of various memories. MRAM is poised for a unified memory subsystem that can revamp the architectures of emerging ultra-low-energy systems such as Internet-of-Things (IOT) and wearable devices. Furthermore, MRAM has a potential to transform computing-centric architectures at more advanced nodes.