Material innovation for MOL, BEOL, and 3D integration

This paper presents new materials and processes for advanced technology node of Si semiconductor devices. For MOL, Co contact plug and amorphous Co-Ti barrier showed a good adhesion, limited growth of Co silicide, and a low contact resistivity of the order of 10
⁻⁹
Ωcm
²
on both n+ and p+ Si. For BEOL, a CVD-MnOx layer could be formed conformally in high-aspect ratio contact holes. The ALD-MnOx layer of 1.2 nm thick showed a good diffusion barrier property at 400 °C. For 3D integration, TSV of 10 μm diameter and 80 μm depth could be filled with low resistivity sintered Cu paste without voids.