Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology

To overcome the von-Neumann bottleneck, compact elements enabling logic-in-memory applications are essential. Here we present for the first time a reconfigurable NAND/ NOR logic gate based on a single ferroelectric FET (FeFET), having hafnium oxide as the ferroelectric material and a pull-up device connected in series. Logic functionality is achieved by using the internal polarization state of the FeFET as one input and the applied gate voltage as the second input of the logic gate. Therefore, the logic and the memory function are directly coupled. Moreover, we demonstrate electrical reconfigurability between NAND and NOR logic functionality of the proposed gate by applying a specific source bias or back bias voltage to the FeFET. The presented electrical and SPICE simulation results reveal the feasibility of the concept for 28 nm HKMG as well as 22 nm FD-SOI FeFETs.