Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation

This work illustrates the use of device-physics and system-level understanding to demonstrate a novel device-technique to achieve high-linearity in RF-GaN HEMTs. By eliminating access-regions and engineering device-transfer function (gm and its derivatives), a significant boost in large-signal non-linearity: 20 dB reduction in harmonics, OIP3 boost by 6 dB is shown. The full potential of this technique in providing IMD below the state-of-art is highlighted in commercial RF-devices using physical-MVSG model.