Negative capacitance 2D MoS2 transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free

To realize steep-slope MoS2 n-type FET, we fabricate negative capacitance FET (NCFET) structure using ferroelectric HfZrOx (HZO)/AlOx as dielectric layer. The MoS2 NCFET devices exhibit ultra-low subthreshold swing (SS) of 23 mV/dec, sub-60mV/dec over 6 orders of Id, nearly hysteresis-free up to V
ds
= 1V, small |V
th
| <0.4V, I
on
/I
off
ratio >10
⁹
, and small DIBL of 25 mV/V. Importantly, we can modulate 5 orders of Id using a gate drive of 232 mV, clearly demonstrating the potential of MoS2 NCFET for low-power electronics applications. Furthermore, compared to normal MoS
2
FET with 11.2 nm equivalent oxide thickness (EOT), the NCFET achieve 60% improvement in Id (250 μA/μm) and 4 times improvement in transconductance.