Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance

Steep-slope MoS
₂
NC-FETs with ferroelectric HZO and internal metal gate in the gate dielectric stack are demonstrated. SS less than 50 mV/dec is obtained for both forward and reverse gate voltage sweeps, with minimum SS
_for
= 37.6 mV/dec and minimum SS
_Rev
= 42.2 mV/dec. A second minimum of SSr
_ev
as low as 8.3 mV/dec can be measured as the result of dynamic switching at high speed in ferroelectric HZO. The impact of parasitic capacitance on SS and dynamic hysteresis is systematically studied by both experiment and dynamic simulation.