Thermal management characterization of microassembled high power DFB broad area lasers emitting at 975 nm

This paper reports on thermal performance characterization of a new high power Distributed Feedback (DFB) laser diode technology for Yb, Er and Yb/Er doped fiber lasers requiring a very narrow and stable absorption line close to 975nm. The thermal resistance of the DFB device is extracted using a dedicated equipment namely T3STER© allowing the characterization of the thermal contribution of each part of the microassembled device. The thermal resistance of the whole device (« 2.5K/W) agrees with the state-of-the-art published values.