Influence of microwave pulse parameters on the burnout effect of an LNA constructed by a GaAs PHEMT

In this paper, the influence of microwave pulse parameters on the burnout effect of a low noise amplifier (LNA) constructed by a GaAs PHEMT is analyzed. Through burnout mechanism analysis and simulation verification, the vulnerable spot for the GaAs PHEMT in the studied LNA is below the gate and near the source. The influences of the pulse width, the pulse repetition frequency (PRF) and the pulse number are analyzed by simulations. The results show that for a single-shot microwave pulse, increasing the pulse width can reduce the burnout power threshold; for a repetitive microwave pulse, increasing the pulse width, the PRF and the pulse number all can reduce the burnout power threshold when other conditions remain unchanged.