Fine-pitch dielectric layer development for hybrid fan-out packaging application

A fine-pitch dielectric layer was introduced in hybrid fan-out packaging structure. A hybrid fan-out structure could enable higher routing density and higher power consumption electronics. The siloxane material dielectric layer with breakdown voltage over 400kV/mm and leakage current less than 10
^-12
A at 200kV/mm was fabricated on silicon wafer. Moreover, Line/Space 2/2μm microvias resolution was achieved with taper angle of 70.8°. The adhesion between trace and dielectric was evaluated by high temp. / high humidity test. The possibility to exhibit 2/2μm fine-pitch hybrid fanout packaging was demonstrated in package level.