Design and simulation of front-end broadband RF power amplifier for LTE TDD 2.3 GHz

In this paper, the design and simulation of front-end broadband RF (Radio Frequency) power amplifier for LTE (Long-Term Evolution) TDD (TimeDivision Duplexing) transmission at 2.3 GHz is reported. The amplifier circuit is designed by using Cree GaN (Gallium Nitride) HEMT (High Electrom Mobility Transistor) CGH25120F transistor under class-A configuration scheme. The design and simulation using harmonic balanced simulator and load-pull method results an amplifier with power gain of 16.166 dB with PAE (Power-Added Efficiency) of 16.778%. The RF power amplifier can produce output power of 41.163 dBm with S11 and S22 less than 5dB in 30MHz bandwidth. Mixed-signal simulation also has been carried-out by using QPSK (Quadrature Phase Shift Keying) modulation scheme at 150 Mbps bit rate.