RF mixer design techniques using GaAs process

This paper summarizes the RF mixer design techniques using Gallium Arsenide (GaAs) process. The design issues of high local oscillator's (LO) power requirement and the high mixer conversion loss are reviewed. Finally, this paper proposes a mixer design with low LO drive power and low conversion loss using 0.13 μm GaAs pseudomorphic high electron-mobility transistor process based on the ring mixer structure with buffer amplifier at the intermediate frequency output.