Temperature dependence of tunable resonators on FR4 and silicon

This paper deals with the impact of the temperature on tunable resonators with regard to the frequency shift, the current consumption and the insertion losses in the 30 °C to 150 °C range. Two different technologies have been selected; the first one is a FR4 technology, where the tunability is performed with a PIN diode, whereas on the second one, the resonators are designed on a silicon substrate with an integrated active element. In each technology, the active component switches from an open-ended to a short-ended resonator. This paper presents three different configurations; one on the FR4 substrate where the resonant frequency switches from 2.8 GHz to 1.45 GHz and two others, on the silicon substrate, where the first resonator is designed in the same frequency range and switches from 2.96 GHz to 2.1 GHz whereas the second one is designed at higher frequency (commutes from 7.3 GHz to 3.9 GHz). Electromagnetic simulations are compared to the measurements and are presented between 30 °C and 150 °C. Current consumption elements are also compared between the two technologies.