A finite difference method modeling for IGBT and diode in PSPICE

In this paper, a novel modeling approach for both PiN diode and IGBT is presented. In this model, the carrier diffusion equation, which retains the distributed nature of charge dynamics in bipolar power devices, is solved directly by finite difference method in PSPICE. The physical basis of this model and some practical considerations are introduced. Compared with conventional Fourier based IGBT model, the presented model keeps higher simulation speed and comparable high accuracy. These features were also verified by simulations and experiments.