TCAD simulation of single-event transients in the 65-nm CMOS element of matching for a content-addressable memory

The logical element of matching on the STG DICE cell for a content-addressable memory was simulated. The element contains two identical groups of transistors. The TCAD simulation of the 65-nm CMOS element showed the resistance to impacts of single nuclear particles up to 60 MeV×cm2/mg comparing to elements on 6-transistors memory cells. The charge collection from the track of single nuclear particles by only transistors of just one of the two groups doesn't lead to the failure state of the cell. In combinational logic of the element of matching can be short-term noise pulses can be registered in the range of the linear energy transfer 20-60 MeV×cm2/mg on the tracks of single nuclear particles.