Small and low-profile GaN hybrid-IC LNA using embedded-IC process in silicon

This paper presents new compact, low-profile GaN hybrid-IC technologies. Two different kinds of IC integration methods based on a silicon substrate are studied to make GaN hybrid-ICs. First, a hybrid-IC LNA is designed and fabricated to estimate their RF performances with the combination of a discrete transistor and silicon integrated passive devices (IPDs) in which an input and output matching networks are integrated as thin-film devices. Second, two GaN HEMT transistors are fully embedded in the silicon interposer using cavities to make a low-profile package. All kinds of passive components for matching networks are also integrated on the Si-interposer and their interconnections are made using lithography technology. The size of the realized hybrid GaN power LNA is only 1.6 × 2.4 × 0.12 mm
³
and it is almost the same as the commercial MMIC size.