Conductance modulation in 2D materials by NEMS for lower-power applications

In this work, a NEMS actuator is analyzed to provide mechanical strain, gain, and electrical connection to a TMD to achieve an equivalent SS of 13 mV/dec while maintaining an on/off ratio of 10
⁶
and an R
_ON
of 46 MΩ/□. Fig. 1(a) contains a perspective view of the device showing a TMD suspended between a fixed stud (drain) and flexible cantilever (source). When a voltage (V
_GS
) is applied between the fixed gate and source, an electrostatic force displaces the cantilever away from the drain. The cantilever displacement causes tensile strain in the TMD and concomitant change in its bandgap and conductivity. In this design, adhesive forces are avoided while the attractive van der Waals force between the gate and source is exploited for mechanical gain.