Noise modeling of transferred-substrate InP-DHBTs

This paper addresses noise modeling of transfersubstrate indium phosphide double heterobipolar transistors (InP DHBTs). Transistors with an emitter area of 0.8 × 6 μm
²
(single-finger) and 2 × 0.8 × 6 μm
²
(double-finger) are measured and simulated. It turns out that the correlation of shot-noise sources is negligible for these devices, although it was found in earlier works to be essential to describe GaAs HBT noise behavior. As a result, the work provides the basis for reliable extrapolation of noise performance beyond the frequency range provided by standard noise measurement equipment.