0.5-/spl mu/m-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-/spl mu/m CMOS applications

We developed 0.5 /spl mu/m-pitch Cu-dual-damascene metallization by using very low-k organic SOG (HSG-R7; Hitachi Chemical Co., k=2.9) as the ILD. Interconnects using HSG reduced the interconnect capacitance by 30% compared to that of interconnects using TEOS. Furthermore, the electrical characteristics, such as line and via resistances, show that the HSG-ILD combination is feasible for 0.18-/spl mu/m CMOS applications.